Temperature scaling of reverse current generated in proton irradiated silicon bulk

Low-temperature positron-lifetime studies of proton-irradiated silicon.

Cryogenic temperature performance of heavily irradiated silicon detectors

The charge collection e$ciency (CCE) of silicon detectors, previously irradiated with high neutron #uences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2]1014 n/cm2 is 100% at a bias voltage of 50 V. For 2]1015 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligibl...

Leakage current of hadron irradiated silicon detectors - material dependence

The leakage current increase of silicon detectors irradiated with fast neutrons was measured in the fluence range from 10 to 10 cm for a wide range of different starting material. The oxygen concentration in the investigated silicon varied from 9×10 cm to below 2×10 cm and the carbon concentration from 2×10 cm to below 5×10 cm. Furthermore the resistivity differed from 100 Ωcm to 20 KΩcm for th...

Bulk quantities of single-crystal silicon micro-/nanoribbons generated from bulk wafers.

This Letter demonstrates a strategy for producing bulk quantities of high quality, dimensionally uniform single-crystal silicon micro- and nanoribbons from bulk silicon (111) wafers. The process uses etched trenches with controlled rippled structures defined on the sidewalls, together with angled evaporation of masking materials and anisotropic wet etching of the silicon, to produce multilayer ...

Electron spin coherence of silicon vacancies in proton-irradiated 4H-SiC

We report T2 spin coherence times for electronic states localized in Si vacancies in 4H -SiC. Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences (1013 and 1014 cm−2) in order to create samples with unique defect concentrations. Using optically detected magnetic resonance and spin echo, the coherence times for each sample were measured...